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QAD-1000L InGaAs Quadrant APD Detector
Description
DESCRIPTION
nGaAs Quadrant APD Detector, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 1mm in diameter. Planar-passivated device structure.
Applications
● Laser guidance
● Laser positioning
● Laser navigation
● Laser range finder
Features
● Top illumination planar APD
● Narrow Element gap,
● Low Crosstalk,
● Good Reponsivity homogeneity of each Quadrant
|
Operating voltage |
0.99×VBR |
Operating temperature |
-50~+85℃ |
Power dissipation |
100mW |
|
Forward current |
10mA |
storage temperature |
-55~+100℃ |
Soldering temperature(time) |
260℃（10s） |
OPTICAL AND ELECTRICAL CHARACTERISTICS (T=25°C)
|
Parameters |
Sym |
Test conditions |
Min |
Yyp |
Max |
Unit |
|
Response Spectrum |
λ |
— |
1000~1700 |
nm |
||
|
Active diameter |
φ |
— |
1000 |
μm |
||
|
Element Gap |
|
— |
100 |
μm |
||
|
Reponsivity |
Re |
λ=1.55µm,φe=1µw, M=10 |
9.0 |
9.5 |
|
A/W |
|
Maximum multiplication gain |
M |
|
20 |
|
|
|
|
Crosstalk |
SL |
M=10 |
|
|
10% |
|
|
Response time |
ts |
f=1MHz,RL=50? |
|
1.5 |
3.0 |
ns |
|
Dark current |
ID |
M=10 |
|
25 |
100 |
nA |
|
Reverse breakdown voltage |
VCC |
IR=100uA |
|
|
60 |
V |
|
Capacitance |
|
|
|
12 |
15 |
pF |
|
Operating voltage temperature |
δ |
Tc=-40～+85℃ |
|
0.10 |
0.15 |
V/℃ |
Important Notice
Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.
The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.
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